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Nanoscale Ferromagnetic Cobalt‐Doped ZnO Structures Formed by Deep‐UV Direct‐Patterning
Author(s) -
Yeh ChunCheng,
Colis Silviu,
Fioux Philippe,
Zan HsiaoWen,
Berling Dominique,
Soppera Olivier
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700738
Subject(s) - materials science , annealing (glass) , cobalt , doping , ferromagnetism , zinc , nanoscopic scale , optoelectronics , lithography , resist , nanotechnology , composite material , condensed matter physics , layer (electronics) , metallurgy , physics
Cobalt (II) acetate is mixed with zinc methacrylate (ZnMAA) to form a photopatternable Co‐doped zinc oxide precursor. By using deep‐UV (DUV) interference lithography, Co‐doped ZnMAA precursor can be patterned as negative tone resist and transformed into ferromagnetic Co:ZnO films after thermal treatment. Moreover, Co:ZnO patterns as small as 300 nm line‐width can be easily obtained. To have an in‐depth understanding to the effect of DUV‐patterning process as well as thermal annealing on Co:ZnO films derived from Co‐doped ZnMAA precursor, optical, magnetic, and electrical characterizations are performed on Co:ZnO films prepared in different conditions. For the Co:ZnO film prepared without DUV‐patterning, large zero‐field‐cooling (ZFC)–field‐cooling (FC) irreversibility appears in superconducting quantum interference device measurements after vacuum annealing, indicating that Co clusters have formed inside the film. On the other hand, no ZFC–FC bifurcation can be observed for the DUV‐patterned Co:ZnO film after the vacuum annealing, suggesting that the uniformity of Co ion distribution inside ZnO lattice is improved by DUV‐patterning.