Premium
Field‐Effect Transistors Using Thin Flakes of Misfit Layer Compound (LaS) 1.20 CrS 2
Author(s) -
Shimazu Yoshihiro,
Takanashi Masaya,
Kurihara Daiki,
Fujisawa Yutaro,
Arai Kensuke,
Iwabuchi Tatsuya,
Suzuki Kazuya
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700631
Subject(s) - materials science , monolayer , layer (electronics) , activation energy , exfoliation joint , conductance , condensed matter physics , field effect transistor , transistor , thin film , gate voltage , threshold voltage , voltage , nanotechnology , graphene , electrical engineering , chemistry , physics , engineering
Misfit layer compounds consist of two sublattices that are incommensurately modulated. These sublattices have the structures of cubic monochalcogenide and transition‐metal dichalcogenide monolayers. In this work, a semiconducting misfit layer compound (LaS) 1 . 20 CrS 2 is synthesized by chemical vapor transport. In absence of intervening LaS layers, a CrS 2 layer does not exist in a stable state. Using thin flakes of (LaS) 1 . 20 CrS 2 obtained by mechanical exfoliation, field‐effect transistors are fabricated. The devices show n‐type transport characteristics. An on/off ratio of ≈250 (at 120 K) and mobility of 0.3 cm 2 V −1 s −1 (at room temperature) are observed. Temperature dependence of the conductance obeys thermal activation with the activation energy nearly linearly dependent on the gate voltage. This gate‐voltage dependence suggests that the density of trap states is considerably larger than that of MoS 2 thin flakes.