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Mechanical Stability Analysis via Neutral Mechanical Plane for High‐Performance Flexible Si Nanomembrane FDSOI Device
Author(s) -
Kim SeungYoon,
Bong Jae Hoon,
Kim Cheolgyu,
Hwang Wan Sik,
Kim TaekSoo,
Cho Byung Jin
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700618
Subject(s) - materials science , bend radius , silicon on insulator , bending , flexible electronics , radius , transistor , neutral plane , optoelectronics , reliability (semiconductor) , nanotechnology , composite material , silicon , electrical engineering , computer security , voltage , computer science , engineering , power (physics) , physics , quantum mechanics
High‐performance mechanically flexible Si nanomembrane (NM) fully depleted silicon‐on‐insulator field‐effect transistors are realized via neutral mechanical plane (NMP) optimization. This NMP‐optimized Si NM flexible device, using both the analytical and numerical modeling, shows excellent mechanical and electrical stability even at a bending condition with a 1 mm radius. The strain at this point is less than 0.01% that is much smaller than the strain tolerance of 0.1%. This work reveals that mechanical reliability is heavily associated with the location of the NMP and the NMP optimization is essential to realize the Si NM flexible electronics.