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Thermal Stability Study of GaP/High‐ k Dielectrics Interfaces
Author(s) -
Wang Xinglu,
Zhao Yanfei,
Huang Rong,
Li Fangsen,
Lu Xiaoming,
Huang Zengli,
Shen Yang,
Wang Hu,
Shao Dawei,
Liu Mengyin,
Tan Baimei,
Zhang Jian,
Xie Xinjian,
Dingsun An,
Dong Hong
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700609
Subject(s) - materials science , x ray photoelectron spectroscopy , dielectric , semiconductor , band gap , annealing (glass) , thermal stability , optoelectronics , high κ dielectric , analytical chemistry (journal) , atomic layer deposition , thin film , nanotechnology , chemical engineering , chemistry , composite material , chromatography , engineering
High‐quality interface between high‐mobility III–V compound semiconductor and high‐ k dielectrics is critical for achieving high electrical performance of the devices. Elemental diffusion through the high‐ k dielectrics from III–V semiconductors (e.g., InP, InAs, and InGaAs) upon the atomic layer deposition process and during the postdeposition annealing (PDA) at low temperature rises a concern with the reliability of III–V compound semiconductor devices. In this work, the thermal stability of GaP/high‐ k dielectrics interface has been studied in terms of elemental diffusion upon PDA, using angle‐resolved X‐ray photoelectron spectroscopy. The Ga and P oxides are below the detection limit of X‐ray photoelectron spectroscopy for the GaP/HfO 2 stack after PDA at 400 °C, and for the GaP/Al 2 O 3 stack after PDA at 500 °C. Outdiffusion of Ga and P atoms through HfO 2 film is detected by time‐of‐flight secondary ions mass spectrometry after PDA at 500 and 600 °C. Highly stable GaP/high‐ k dielectrics interfaces suggest that a thin barrier layer of wide bandgap GaP between the III–V semiconductor channel materials and high‐ k dielectrics would benefit the reliability of the devices.