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Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces
Author(s) -
Shutthanandan Vaithiyalingam,
Choudhury Samrat,
Manandhar Sandeep,
Kaspar Tiffany C.,
Wang Chongmin,
Devaraj Arun,
Wirth Brian D.,
Thevuthasan Suntharampilli,
Hoagland Richard G.,
Dholabhai Pratik P.,
Uberuaga Blas P.,
Kurtz Richard J.
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700037
Subject(s) - materials science , dislocation , oxide , radiation damage , crystallographic defect , stoichiometry , irradiation , chemical physics , metal , radiation , condensed matter physics , optoelectronics , composite material , optics , chemistry , metallurgy , nuclear physics , physics
The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation‐induced defect absorption and recombination, a model system of metallic Cr x V 1− x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored. By controlling film composition, the lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half‐plane (in the metal or the oxide) drive radiation‐induced defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation‐tolerant nanomaterials for next‐generation nuclear power plants.