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Special Section Chemical Vapor Deposition Graphene Deposition: Doping Effects and Grain Boundaries in Thermal CVD Graphene on Recrystallized Cu Foil (Adv. Mater. Interfaces 16/2016)
Author(s) -
Čermák Jan,
Yamada Takatoshi,
Ganzerová Kristína,
Rezek Bohuslav
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201670077
Subject(s) - graphene , materials science , chemical vapor deposition , graphene oxide paper , graphene nanoribbons , foil method , grain boundary , layer (electronics) , graphene foam , substrate (aquarium) , doping , thermal conductivity , crystallite , nanotechnology , oxide , composite material , metallurgy , optoelectronics , microstructure , oceanography , geology
In article 1600166, Jan Čermák, Takatoshi Yamada, and co‐workers describe doping effects in graphene. The cover illustrates a conductivity landscape of thermal chemical vapor deposition (CVD) graphene on polycrystalline copper foil. The morphology of Cu foil substrate (bottom layer) is modulated by cuprous oxide on some grains. Thermal CVD graphene (middle layer) follows well the substrate morphology. Graphene quality, its electronic and mechanical interaction with Cu grains and boundaries control local electrical current as illustrated by the atomic force microscopy conductivity map (top layer).