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Toward High‐Quality Epitaxial LiNbO 3 and LiTaO 3 Thin Films for Acoustic and Optical Applications
Author(s) -
Bartasyte Ausrine,
Margueron Samuel,
Baron Thomas,
Oliveri Stefania,
Boulet Pascal
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600998
Subject(s) - materials science , optoelectronics , epitaxy , nanophotonics , lithium niobate , thin film , surface acoustic wave , silicon , bandwidth (computing) , optics , telecommunications , computer science , nanotechnology , physics , layer (electronics)
Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro‐optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro‐optics are equivalent to silicon in electronics, and about 70% of radio‐frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next‐generation of high‐frequency and/or wide‐band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.