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Tuning the Conductivity of Polyaniline through Doping by Means of Single Precursor Vapor Phase Infiltration
Author(s) -
Wang Weike,
Yang Fan,
Chen Chaoqiu,
Zhang Lianbing,
Qin Yong,
Knez Mato
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600806
Subject(s) - materials science , infiltration (hvac) , polyaniline , raman spectroscopy , conductivity , scanning electron microscope , fourier transform infrared spectroscopy , doping , chemical vapor deposition , chemical engineering , metal , analytical chemistry (journal) , composite material , nanotechnology , organic chemistry , chemistry , polymer , optoelectronics , optics , metallurgy , polymerization , physics , engineering
This work describes a novel single precursor vapor phase infiltration (VPI) process to dope polyaniline (PANI). The infiltration is performed with the metal containing atomic layer deposition precursors MoCl 5 or SnCl 4 . The conductivities are assessed with four‐point probe measurements and show significant enhancements by up to 6 orders of magnitude, confirming the efficiency of the VPI process. Furthermore, it is found that the conductivities of PANI/MoCl 5 and PANI/SnCl 4 outperform the conductivity of HCl‐doped PANI if exposed to elevated temperatures (150 °C) in vacuum. The chemical changes resulting from the infiltration of PANI are characterized applying FTIR and Raman spectroscopy. Scanning electron microscopy images show that the morphologies of the samples do not alter after the infiltration process.