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Tailoring Self‐Polarization of BaTiO 3 Thin Films by Interface Engineering and Flexoelectric Effect
Author(s) -
Guo Rui,
Shen Lei,
Wang Han,
Lim Zhishiuh,
Lu Wenlai,
Yang Ping,
Gruverman Alexei,
Venkatesan Thirumalai,
Feng Yuan Ping,
Chen Jingsheng
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600737
Subject(s) - materials science , polarization (electrochemistry) , stacking , thin film , electric field , optoelectronics , nanotechnology , engineering physics , condensed matter physics , physics , nuclear magnetic resonance , chemistry , quantum mechanics
BaTiO 3 thin films' self‐polarization can be tuned upward or downward, depending on both the substrate termination and the flexoelectric effect upon varying its thickness. Different atomic stacking sequence leads to different self‐polarization direction of fully strained BaTiO 3 films, whereas the internal electric field produced by flexoelectric effect becomes the dominating factor in determining the self‐polarization direction of relaxed BaTiO 3 films.