Premium
Interface Engineering for Precise Threshold Voltage Control in Multilayer‐Channel Thin Film Transistors
Author(s) -
Park Ji Hoon,
Alshammari Fwzah H.,
Wang Zhenwei,
Alshareef Husam N.
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600713
Subject(s) - materials science , transistor , threshold voltage , channel (broadcasting) , interface (matter) , optoelectronics , voltage , field effect transistor , thin film transistor , service (business) , nanotechnology , computer science , layer (electronics) , electrical engineering , computer network , engineering , capillary number , capillary action , composite material , economy , economics
Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field‐effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.