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Ultralow‐Temperature Sol–Gel Route to Metal Oxide Semiconductors for Soft Platforms
Author(s) -
Oh Himchan,
Yang JongHeon,
Hwang ChiSun
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600664
Subject(s) - materials science , oxide , sol gel , metal , nanotechnology , metallurgy
By briefly soaking the sol–gel oxide films into hot water (80 °C), the curing temperature is dramatically lowered. Steeping in water promotes the oxidation of sol–gel films and helps to remove the contaminants inside, converting sol–gel coats to high‐quality metal oxide films at low temperatures. High‐performance, reliable metal oxide thin film transistors are successfully demonstrated through this method.