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Spiral Growth of SnSe 2 Crystals by Chemical Vapor Deposition
Author(s) -
Wu Jingjie,
Hu Zhili,
Jin Zehua,
Lei Sidong,
Guo Hua,
Chatterjee Kuntal,
Zhang Jing,
Yang Yingchao,
Li Bo,
Liu Yang,
Lai Jiawei,
Vajtai Robert,
Yakobson Boris,
Tang Ming,
Lou Jun,
Ajayan Pulickel M.
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600383
Subject(s) - materials science , chemical vapor deposition , dislocation , microsecond , band gap , responsivity , crystal growth , spiral (railway) , crystal (programming language) , chemical physics , phase (matter) , deposition (geology) , optoelectronics , crystallography , condensed matter physics , nanotechnology , optics , photodetector , composite material , mathematical analysis , paleontology , programming language , chemistry , physics , mathematics , organic chemistry , sediment , computer science , biology
Although a lot of work has been reported on the growth and properties of 2D atomic layered materials, the growth mechanism for these crystals via the chemical vapor deposition method (CVD) has remained elusive. Here, a screw dislocation–driven spiral growth of SnSe 2 crystal flakes via CVD is reported. The polymorph of as‐synthesized SnSe 2 crystals is verified as 1T‐phase by both experimental characterization and theoretical calculation. The density functional theory study reveals morphology transformation during the growth process while phase‐field modeling unravels the screw dislocation propagation to form the pyramid‐like structure of SnSe 2 . The optical band gap of SnSe 2 crystals relates to an indirect band gap of 1.0 eV. The photodetector devices based on SnSe 2 crystals exhibit high responsivity and ultrafast response time in the microsecond regime.