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Single‐Crystalline W‐Doped VO 2 Nanobeams with Highly Reversible Electrical and Plasmonic Responses Near Room Temperature
Author(s) -
Wang Ning,
Duchamp Martial,
Xue Can,
DuninBorkowski Rafal E.,
Liu Guowei,
Long Yi
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600164
Subject(s) - materials science , doping , plasmon , electrical resistivity and conductivity , surface plasmon resonance , transverse plane , metal–insulator transition , polarization (electrochemistry) , condensed matter physics , optoelectronics , metal , nanotechnology , nanoparticle , chemistry , physics , structural engineering , electrical engineering , metallurgy , engineering
Single‐crystalline vanadium dioxide (VO 2 ) nanostructures are of great interest because of their single‐domain metal‐to‐insulator transition. In this paper, single‐crystalline W‐doped VO 2 nanobeams are synthesized for optical and electrical applications. As a result of differences in the polarization of the beams along their transverse and longitudinal axes, dual‐surface plasmon resonance peaks at 1344 and 619 nm are generated, resulting in an increase in the solar modulating abilities of the VO 2 nanobeams. The conductivity of the single‐crystalline W‐doped VO 2 nanobeams changes by three to four orders of magnitude at the transition temperature, which is of great importance for electrical applications.