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Enabling Quality Interfaces with Mask‐Free Approach to Selective Growth of MoS 2 /Graphene Stacked Structures
Author(s) -
Dong Rui,
Moore Logan,
Ocola Leonidas E.,
Kuljanishvili Irma
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201600098
Subject(s) - graphene , materials science , nanotechnology , quality (philosophy) , physics , quantum mechanics
The mask‐free patterning technique is employed to fabricate arrays of MoS 2 and WS 2 structures on silicon and graphene substrates with quality interfaces. By depositing precursor inks with the AFM cantilevers and subsequent heat treatment in the CVD furnace, it is demonstrated that MoS 2 and WS 2 structures can be formed on graphene surfaces at predefined device architectures.
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