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Electron Holography: Correlative High‐Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer (Adv. Mater. Interfaces 1/2015)
Author(s) -
Song Kyung,
Koch Christoph T.,
Lee Ja Kyung,
Kim Dong Yeong,
Kim Jong Kyu,
Parvizi Amin,
Jung Woo Young,
Park Chan Gyung,
Jeong Hyeok Jae,
Kim Hyoung Seop,
Cao Ye,
Yang Tiannan,
Chen LongQing,
Oh Sang Ho
Publication year - 2015
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201570008
Subject(s) - materials science , piezoelectricity , correlative , holography , strain (injury) , resolution (logic) , high resolution , electron holography , charge (physics) , electron , optoelectronics , optics , nanotechnology , composite material , physics , medicine , philosophy , linguistics , remote sensing , geology , quantum mechanics , artificial intelligence , transmission electron microscopy , computer science
Sub‐nanometer resolution 2D strain maps of the InGaN/GaN multiquantum wells in conventional blue light emitting diodes reveal that the InGaN quantum wells are compressively strained and elongated along the polar growth direction, exerting compressive stress/strain on the GaN quantum barriers. In article 1400281, S. H. Oh and co‐workers demonstrate that a combined analysis of the strain maps with the total charge density map quantitatively evaluates the internal piezoelectric fields and the electrostatic screening interaction between the polarization charges and the free charge carriers.