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Copper‐Doped Chromium Oxide Hole‐Transporting Layer for Perovskite Solar Cells: Interface Engineering and Performance Improvement
Author(s) -
Qin PingLi,
Lei HongWei,
Zheng XiaoLu,
Liu Qin,
Tao Hong,
Yang Guang,
Ke WeiJun,
Xiong LiangBin,
Qin MingChao,
Zhao XingZhong,
Fang GuoJia
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500799
Subject(s) - materials science , perovskite (structure) , doping , layer (electronics) , work function , energy conversion efficiency , chromium , optoelectronics , fabrication , oxide , conductivity , chemical engineering , nanotechnology , metallurgy , medicine , alternative medicine , pathology , engineering , chemistry
To achieve high performance for inverted structure perovskite solar cells, the design of hole‐transporting layer (HTL) and related interfacial engineering are very important tasks. To avoid the hygroscopic characteristics of poly (3, 4‐ethylenedioxythiophene):poly (styrenesulfonate) that may degrade the adjacent moisture‐sensitive perovskite layer, here, a new CrO x ‐based hole‐transport material has been introduced. The feasibility of fabrication efficient perovskite solar cells with CrO x and Cu‐CrO x as HTLs is confirmed for the first time. Cu doping can modify the chromium ion contents and suppress the formation of surface hydroxylation and CrO 3 in the CrO x film, which can increase work function, electrical conductivity, and carrier mobility of the CrO x films. Consequently, the power conversion efficiency of the corresponding device increases to 10.99% from its original value of 9.27%. This study not only provides a novel HTL system for high performance and decently stable optoelectronic devices but also reveals the importance of HTL doping for interface engineering.