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Defect‐Modulated Transistors and Gas‐Enhanced Photodetectors on ReS 2 Nanosheets
Author(s) -
Yang Shengxue,
Kang Jun,
Yue Qu,
Coey J. M. D.,
Jiang Chengbao
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500707
Subject(s) - nanosheet , materials science , transistor , photodetector , nanotechnology , service (business) , optoelectronics , electrical engineering , business , engineering , voltage , marketing
Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS 2 nanosheet transistors, influencing the current on/off ratio and mobility.