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Wafer‐Scale Selective‐Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates
Author(s) -
Dandley Erinn C.,
Lemaire Paul C.,
Zhu Zhongwei,
Yoon Alex,
Sheet Lubab,
Parsons Gregory N.
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500431
Subject(s) - materials science , polymer , oxide , methyl methacrylate , chemical vapor deposition , poly(methyl methacrylate) , metal , wafer , nanoscopic scale , chemical engineering , silicon oxide , silicon , saturation (graph theory) , nanotechnology , polymer chemistry , layer (electronics) , polymerization , composite material , optoelectronics , metallurgy , silicon nitride , mathematics , combinatorics , engineering
Patterned, chemically reactive poly(methyl)methacrylate can act as a chemical “sponge” via Lewis acid/base adduct formation with metal‐organic reactants commonly used in atomic layer deposition. Extended reactant exposures saturate the reactant within the polymer, and subsequent oxidation removes the polymer and converts the saturated reactant to a metal oxide film that precisely mimics the lateral dimensions of the original polymer. Resulting oxide thickness scales with the starting polymer thickness. Regions without polymer are coated with less than 1 nm of metal oxide. Repeatable nanoscale features are formed simultaneously and uniformly across a 150 mm diameter silicon wafer.