Premium
Large‐Area, Nanometer‐Scale Discrete Doping of Semiconductors via Block Copolymer Self‐Assembly
Author(s) -
Popere Bhooshan C.,
Russ Boris,
Heitsch Andrew T.,
Trefonas Peter,
Segalman Rachel A.
Publication year - 2015
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500421
Subject(s) - dopant , materials science , doping , nanoscopic scale , nanometre , scale (ratio) , planar , nanotechnology , copolymer , semiconductor , block (permutation group theory) , computer science , optoelectronics , polymer , computer graphics (images) , physics , geometry , mathematics , quantum mechanics , composite material
A novel platform for “nanoconfined” doping of planar semiconductors is based on block copolymer self‐assembly. This methodology enables precise control over incorporated dopant positions in all three spatial dimensions on the nanoscopic length scale, along with the local dopant concentration, demonstrating a significant advancement in the ability to confine dopant atoms at the technologically relevant length scale.