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Combinatorial Investigation and Modelling of MoO 3 Hole‐Selective Contact in TiO 2 |Co 3 O 4 |MoO 3 All‐Oxide Solar Cells
Author(s) -
Majhi Koushik,
Bertoluzzi Luca,
Rietwyk Kevin James,
Ginsburg Adam,
Keller David A.,
LopezVaro Pilar,
Anderson Assaf Y.,
Bisquert Juan,
Zaban Arie
Publication year - 2016
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500405
Subject(s) - materials science , oxide , passivation , tin oxide , open circuit voltage , solar cell , substrate (aquarium) , layer (electronics) , cobalt oxide , cobalt , diffusion barrier , diffusion , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , voltage , metallurgy , oceanography , physics , chemistry , quantum mechanics , chromatography , geology , engineering , thermodynamics
A TiO 2 |Co 3 O 4 |MoO 3 all‐oxide solar cell produced by spray pyrolysis and pulsed laser deposition (PLD) onto a fluorine‐doped tin‐oxide (FTO) glass substrate with gold (Au) back contacts is demonstrated for the first time. A combinatorial approach is implemented to study the effect of molybdenum oxide (MoO 3 ) as a recombination contact and the influence of the cobalt oxide (Co 3 O 4 ) light‐absorber thickness on the performance of the solar cells. An increase of more than 200 mV in the open circuit voltage ( V oc ) is observed with a concurrent enhancement in terms of short‐circuit current ( J sc ) and maximum power in comparison with TiO 2 |Co 3 O 4 devices without the MoO 3 layer. To understand the mechanism, full drift diffusion simulations are performed. The higher performance is attributed to elimination of a recombination process at the absorber/metal back‐contact interface and surface passivation by the MoO 3 layer.