Combinatorial Investigation and Modelling of MoO 3  Hole‐Selective Contact in TiO 2 |Co 3 O 4 |MoO 3  All‐Oxide Solar Cells | Zendy

Majhi Koushik | Zendy; Bertoluzzi Luca | Zendy; Rietwyk Kevin James | Zendy; Ginsburg Adam | Zendy; Keller David A. | Zendy; LopezVaro Pilar | Zendy; Anderson Assaf Y. | Zendy; Bisquert Juan | Zendy; Zaban Arie | Zendy

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Combinatorial Investigation and Modelling of MoO 3 Hole‐Selective Contact in TiO 2 |Co 3 O 4 |MoO 3 All‐Oxide Solar Cells

Author(s) -

Majhi Koushik,

Bertoluzzi Luca,

Rietwyk Kevin James,

Ginsburg Adam,

Keller David A.,

LopezVaro Pilar,

Anderson Assaf Y.,

Bisquert Juan,

Zaban Arie

Publication year - 2016

Publication title -

advanced materials interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.671

H-Index - 65

ISSN - 2196-7350

DOI - 10.1002/admi.201500405

Subject(s) - materials science , oxide , passivation , tin oxide , open circuit voltage , solar cell , substrate (aquarium) , layer (electronics) , cobalt oxide , cobalt , diffusion barrier , diffusion , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , voltage , metallurgy , oceanography , physics , chemistry , quantum mechanics , chromatography , geology , engineering , thermodynamics

A TiO 2 |Co 3 O 4 |MoO 3 all‐oxide solar cell produced by spray pyrolysis and pulsed laser deposition (PLD) onto a fluorine‐doped tin‐oxide (FTO) glass substrate with gold (Au) back contacts is demonstrated for the first time. A combinatorial approach is implemented to study the effect of molybdenum oxide (MoO 3 ) as a recombination contact and the influence of the cobalt oxide (Co 3 O 4 ) light‐absorber thickness on the performance of the solar cells. An increase of more than 200 mV in the open circuit voltage ( V oc ) is observed with a concurrent enhancement in terms of short‐circuit current ( J sc ) and maximum power in comparison with TiO 2 |Co 3 O 4 devices without the MoO 3 layer. To understand the mechanism, full drift diffusion simulations are performed. The higher performance is attributed to elimination of a recombination process at the absorber/metal back‐contact interface and surface passivation by the MoO 3 layer.

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