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Transparent SnO–SnO 2 p–n Junction Diodes for Electronic and Sensing Applications
Author(s) -
Wang Zhenwei,
Nayak Pradipta K.,
Albar Arwa,
Wei Nini,
Schwingenschlögl Udo,
Alshareef Husam N.
Publication year - 2015
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500374
Subject(s) - rectification , diode , materials science , optoelectronics , sputtering , engineering physics , voltage , nanotechnology , electrical engineering , thin film , physics , engineering
A SnO/SnO 2 p–n junction diode is fabricated using a room‐temperature sputtering process. The p–n diode shows an ideality factor of ≈3 and rectification ratio of ≈10 3 . A large temperature‐dependent knee voltage shift is observed (−20 mV °C −1 ) for the diode, indicating its potential in transparent temperature sensing applications.
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