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Atomic Level 1D Structural Modulations at the Negatively Charged Domain Walls in BiFeO 3 Films
Author(s) -
Wang WenYuan,
Tang YunLong,
Zhu YinLian,
Xu YaoBin,
Liu Ying,
Wang YuJia,
Jagadeesh Suriyaprakash,
Ma XiuLiang
Publication year - 2015
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201500024
Subject(s) - domain (mathematical analysis) , materials science , domain wall (magnetism) , condensed matter physics , transmission electron microscopy , lattice (music) , scanning transmission electron microscopy , atomic units , atomic force microscopy , crystallography , nanotechnology , physics , chemistry , magnetization , magnetic field , quantum mechanics , acoustics , mathematical analysis , mathematics
Charged domain walls (CDWs) show great potentials to mediate the properties of ferroelectrics. Direct mapping of these domain walls at an atomic scale is of critical importance for understanding the domain wall dominated properties. Here, based on aberration‐corrected scanning transmission electron microscopy, tail‐to‐tail CDWs at 71°, 109°, and 180° domains in BiFeO 3 thin films have been identified. 2D mappings demonstrate 1D structural modulations with alternate lattice expansions and clockwise/counterclockwise lattice rotations at these CDWs. Such behaviors of CDWs reveal a remarkable contrast to the uncharged domain walls and imply delicate interactions between bound charges and structural compensations of domain wall. These results are expected to provide new information on domain wall structures and shed some light on the understanding of domain wall properties in ferroelectrics.

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