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Insulating Metal Oxides: In‐Gap States in Electronic Structure of Nonpolar Surfaces of Insulating Metal Oxides (Adv. Mater. Interfaces 8/2014)
Author(s) -
Zherebetskyy Danylo,
Wang LinWang
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201470053
Subject(s) - materials science , semiconductor , metal , electronic structure , surface states , band gap , surface (topology) , condensed matter physics , work (physics) , nanotechnology , optoelectronics , metallurgy , thermodynamics , physics , geometry , mathematics
Surface electronic states, such as the one for the Cu 2 O (111) surface, often determine the electronic properties of semiconductor surfaces. The theoretical work of L.‐W. Wang and co‐workers in article 1300131 demonstrates the appearance of such surface states inside or outside the semiconductor band gap based on the bulk electronic structures of the crystals.