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Epitaxy: A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors (Adv. Mater. Interfaces 8/2014)
Author(s) -
McDaniel Martin D.,
Ngo Thong Q.,
Posadas Agham,
Hu Chengqing,
Lu Sirong,
Smith David J.,
Yu Edward T.,
Demkov Alexander A.,
Ekerdt John G.
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201470050
Subject(s) - materials science , semiconductor , epitaxy , nanotechnology , deposition (geology) , layer (electronics) , compound semiconductor , oxide , chemical deposition , optoelectronics , chemical engineering , metallurgy , paleontology , sediment , engineering , biology
A chemical route to crystalline oxide growth on semiconductors is demonstrated. As J. G. Ekerdt and co‐workers report in article 1400081, the direct deposition of crystalline SrTiO 3 on Ge is achieved through atomic layer deposition. This work is a significant milestone for the monolithic integration of crystalline oxides on semiconductors, with wide‐reaching potential for advanced electronic applications.