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Silicon Nanocrystals: Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals (Adv. Mater. Interfaces 2/2014)
Author(s) -
Kůsová Kateřina,
Hapala Prokop,
Valenta Jan,
Jelínek Pavel,
Cibulka Ondřej,
Ondič Lukáš,
Pelant Ivan
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201470008
Subject(s) - materials science , silicon , nanocrystal , band gap , optoelectronics , semiconductor , luminescence , nanotechnology
Methyl‐passivated silicon nanocrystals, such as the one in the foreground of the cover image, are capable of fast and efficient luminescence although their bulk counterpart is an indirect semiconductor. K. Kû sová and co‐workers show in article 1300042 that appropriately chosen surface capping tensilestrains the crystalline core and thus transforms this form of silicon into a material with a fundamental direct bandgap.