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Oxide Microelectronics: Monolithically Integrated Circuits from Functional Oxides (Adv. Mater. Interfaces 1/2014)
Author(s) -
Jany Rainer,
Richter Christoph,
Woltmann Carsten,
Pfanzelt Georg,
Förg Benjamin,
Rommel Marcus,
Reindl Thomas,
Waizmann Ulrike,
Weis Jürgen,
Mundy Julia A.,
Muller David A.,
Boschker Hans,
Mannhart Jochen
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201470002
Subject(s) - materials science , microelectronics , nmos logic , electronics , oxide , integrated circuit , optoelectronics , electronic circuit , transistor , nanotechnology , chip , field effect transistor , electrical engineering , engineering , voltage , metallurgy
The cover displays an optical microscopy image (interference contrast) of a monolithically integrated all‐oxide NMOS chip, showing sections of five ring‐oscillators. The field effect transistors of these integrated circuits are based on the conducting, twodimensional electron liquid formed at LaAlO 3 /SrTiO 3 interfaces. This work, reported in article 1300031 by R. Jany and co‐workers, represents a breakthrough in oxide electronics. Providing the capability to actively process the signals of oxide devices such as sensors on‐chip, these results illustrate the practicability and the potential of electronics based on functional oxides