Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

Mixed self‐assembled monolayers of C 60 ‐functionalized and different long‐chained insulating phosphonic acids provide molecular scale non‐volatile memory dielectrics for low‐voltage organic thin‐film transistors. The memory retention depends on the insulation of the C 60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.