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Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors
Author(s) -
Khassanov Artoem,
Schmaltz Thomas,
Steinrück HansGeorg,
Magerl Andreas,
Hirsch Andreas,
Halik Marcus
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201400238
Subject(s) - materials science , dielectric , monolayer , transistor , thin film transistor , moiety , optoelectronics , non volatile memory , voltage , nanotechnology , layer (electronics) , electrical engineering , organic chemistry , engineering , chemistry
Mixed self‐assembled monolayers of C 60 ‐functionalized and different long‐chained insulating phosphonic acids provide molecular scale non‐volatile memory dielectrics for low‐voltage organic thin‐film transistors. The memory retention depends on the insulation of the C 60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.