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UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications
Author(s) -
Hwang Jaeeun,
Lee Kyungmin,
Jeong Yesul,
Lee Yong Uk,
Pearson Christopher,
Petty Michael C.,
Kim Hongdoo
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201400206
Subject(s) - materials science , thin film transistor , dielectric , annealing (glass) , fabrication , optoelectronics , oxide , gate dielectric , engineering physics , transistor , nanotechnology , electrical engineering , composite material , metallurgy , voltage , medicine , alternative medicine , engineering , layer (electronics) , pathology
Solution‐based oxide gate dielectric layers are prepared from metal nitrates using UV‐assisted annealing at 150 °C. The leakage current densities of ZrO 2 and Al 2 O 3 dielectrics are less than about 10 ‐9 A/cm 2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm 2 /V.s and an off‐current density of 10 ‐12 A/cm 2 . This low fabrication temperature process is compatible with future plastic electronics technology.