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Suppression of Time‐Dependent Donor/Acceptor Interface Degradation by Redistributing Donor Charge Density
Author(s) -
Lo MingFai,
Ng TszWai,
Mo HinWai,
Chen XianFeng,
Lee ChunSing
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201300082
Subject(s) - materials science , acceptor , x ray photoelectron spectroscopy , redistribution (election) , dissociation (chemistry) , chemical physics , photochemistry , optoelectronics , chemical engineering , chemistry , physics , politics , political science , law , engineering , condensed matter physics
Poor operation stability is a major hurdle for the wide application of organic photovoltaic (OPV) devices. While most attention is given to environmental threats to device stability, we herein show evidence from X‐ray photoemission spectroscopy (XPS) of an intrinsic time‐dependent chemical reaction at a donor/acceptor interface. Albeit with impressive device performance from boron subphthalocyanine chloride (SubPc)/fullerene (C 60 ) interface, the forming boride bonds at its interface hinders the interfacial exciton dissociation and leads to device deterioration. Due to the high electron affinity of molybdenum oxide (MoO 3 ) film, the incorporation of MoO 3 layer under the SubPc film has strong electron‐drawing property and leads to charge‐transfer complex (CTC) formation at the MoO 3 /SubPc interface. The resulting charge redistribution in SubPc molecules effectively suppresses the further interfacial reaction at SubPc/C 60 junction. Our results provide insight for new degradation mechanisms of OPV devices and corresponding stability control via charge redistribution in the donor film.

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