Premium
Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO 3 Resistive Switches
Author(s) -
Gerbi Andrea,
Buzio Renato,
Gadaleta Alessandro,
Anghinolfi Luca,
Caminale Michael,
Bellingeri Emilio,
Siri Antonio Sergio,
Marré Daniele
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201300057
Subject(s) - materials science , schottky barrier , oxide , ballistic conduction , schottky diode , resistive touchscreen , condensed matter physics , optoelectronics , nanotechnology , electron , physics , diode , quantum mechanics , electrical engineering , metallurgy , engineering
Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage‐dependent variation of the local barrier height of the nanometric patches could explain the non‐ideal behaviour of the resistance switching effects in transition‐metal oxide cells.