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Fractional Diffusion in Silicon
Author(s) -
Zijlstra Eeuwe S.,
Kalitsov Alan,
Zier Tobias,
Garcia Martin E.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma201302559
Subject(s) - materials science , silicon , diffusion , chemical physics , semiconductor , molecule , molecular dynamics , ab initio , atomic units , nanotechnology , molecular physics , computational chemistry , thermodynamics , optoelectronics , organic chemistry , quantum mechanics , chemistry , physics
Microscopic processes leading to ultrafast laser‐induced melting of silicon are investigated by large‐scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.