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High‐Performance Nanowire Oxide Photo‐Thin Film Transistor
Author(s) -
Ahn SeungEon,
Jeon Sanghun,
Jeon Youg Woo,
Kim Changjung,
Lee MyoungJae,
Lee ChangWon,
Park Jongbong,
Song Ihun,
Nathan Arokia,
Lee Sungsik,
Chung UIn
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma201301102
Subject(s) - materials science , nanowire , optoelectronics , thin film transistor , transistor , lithography , oxide , photodetector , electron beam lithography , photoconductivity , nanotechnology , layer (electronics) , resist , electrical engineering , engineering , voltage , metallurgy
A gate‐modulated nanowire oxide photosensor is fabricated by electron‐beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10 6 test cycles, and gate‐pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch‐free interactive displays.