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Room‐Temperature Chiral Light‐Emitting Diode Based on Strained Monolayer Semiconductors (Adv. Mater. 36/2021)
Author(s) -
Pu Jiang,
Zhang Wenjin,
Matsuoka Hirofumi,
Kobayashi Yu,
Takaguchi Yuhei,
Miyata Yasumitsu,
Matsuda Kazunari,
Miyauchi Yuhei,
Takenobu Taishi
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202170282
Subject(s) - monolayer , materials science , diode , semiconductor , light emitting diode , optoelectronics , light emission , condensed matter physics , nanotechnology , physics
Light‐Emitting Diodes A room‐temperature electrically tunable chiral light‐emitting diode is realized by Jiang Pu, Taishi Takenobu, and co‐workers in article number 2100601, using strained monolayer transition‐metal dichalcogenides. The strain effects break the three‐fold rotational symmetry, which results in different amounts of spin recombination at the K/K' valleys to generate chiral light emission driven by electric fields. The results provide a new pathway for practical chiral light sources based on monolayer semiconductors.