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Van der Waals Heterostructures: Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures (Adv. Mater. 29/2021)
Author(s) -
Park Soohyung,
Wang Haiyuan,
Schultz Thorsten,
Shin Dongguen,
Ovsyannikov Ruslan,
Zacharias Marios,
Maksimov Dmitrii,
Meissner Matthias,
Hasegawa Yuri,
Yamaguchi Takuma,
Kera Satoshi,
Aljarb Areej,
Hakami Mariam,
Li LainJong,
Tung Vincent,
Amsalem Patrick,
Rossi Mariana,
Koch Norbert
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202170229
Subject(s) - van der waals force , heterojunction , materials science , monolayer , ground state , charge (physics) , graphite , acceptor , condensed matter physics , chemical physics , atomic physics , nanotechnology , physics , molecule , optoelectronics , quantum mechanics , composite material
The amount of charge transfer between components of a van der Waals heterostructure to reach the electronic ground state can exhibit a strong temperature dependence. In article number 2008677, Mariana Rossi, Norbert Koch, and co‐workers experimentally observe that the amount of ground‐state charge transfer in a van der Waals heterostructure formed by monolayer MoS 2 sandwiched between graphite and a molecular electron‐acceptor layer increases by a factor of 3 when going from 7 K to room temperature.
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