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Fused Aromatic Network Structures: Fused Aromatic Network with Exceptionally High Carrier Mobility (Adv. Mater. 9/2021)
Author(s) -
Mahmood Javeed,
Lee Eun Kwang,
Noh HyukJun,
Ahmad Ishfaq,
Seo JeongMin,
Im YoonKwang,
Jeon JongPil,
Kim SeokJin,
Oh Joon Hak,
Baek JongBeom
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202170063
Subject(s) - ambipolar diffusion , materials science , electron mobility , basal plane , doping , optoelectronics , stoichiometry , nanotechnology , organic semiconductor , transistor , charge carrier , thin film transistor , electron , crystallography , organic chemistry , electrical engineering , chemistry , physics , layer (electronics) , quantum mechanics , voltage , engineering
In article number 2004707, Joon Hak Oh, Jong‐Beom Baek, and co‐workers report the design and synthesis of fused aromatic network structures with C 5 N basal plane stoichiometry. Thin films cast onto silicon dioxide substrates from the C 5 N solution exhibit ambipolar charge transport and extraordinary high electron and hole mobilities in field‐effect transistor (FET) devices, superior to the performance of most pristine organic materials without doping.