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Thermoelectric Materials: Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi 2 O 2 Se for High‐Performance Thermoelectrics (Adv. Mater. 4/2021)
Author(s) -
Yang Fang,
Wu Jing,
Suwardi Ady,
Zhao Yunshan,
Liang Boyuan,
Jiang Jie,
Xu Jianwei,
Chi Dongzhi,
Hippalgaonkar Kedar,
Lu Junpeng,
Ni Zhenhua
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202170023
Subject(s) - materials science , thermoelectric materials , thermoelectric effect , optoelectronics , piezoelectricity , phonon scattering , seebeck coefficient , scattering , phonon , transistor , field effect transistor , voltage , condensed matter physics , thermal conductivity , composite material , electrical engineering , optics , physics , thermodynamics , engineering
A new strategy of tuning the scattering mechanism to decouple electric conductivity with Seebeck coefficient for high‐performance thermoelectrics is realized by Jing Wu, Junpeng Lu, Zhenhua Ni, and co‐workers, as described in article number 2004786. By applying a gate voltage on a 2D Bi 2 O 2 Se‐based field‐effect transistor, a high thermoelectric power factor over a wide temperature range is achieved due to persistently high mobility arising from the highly gate‐tunable scattering mechanism.