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Ambipolar Channel p‐TMD/n‐Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel
Author(s) -
Choi Wonjun,
Ahn Jongtae,
Kim KiTae,
Jin HyeJin,
Hong Sungjae,
Hwang Do Kyung,
Im Seongil
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202103079
Subject(s) - ambipolar diffusion , materials science , optoelectronics , heterojunction , photodiode , transistor , field effect transistor , band gap , diode , voltage , electrical engineering , physics , electron , quantum mechanics , engineering
Highly crystalline 2D/3D‐mixed p‐transition metal dichalcogenide (TMD)/n‐Ga 2 O 3 heterojunction devices are fabricated by mechanical exfoliation of each p‐ and n‐type material. N‐type β‐Ga 2 O 3 and p‐type TMD separately play as a channel for junction field effect transistors (JFETs) with each type of carriers as well as materials for a heterojunction PN diode. The work thus mainly focuses on such ambipolar channel transistors with two different types of channel in a single device architecture. For more extended applications, the transparency of high energy band gap β‐Ga 2 O 3 (E g ≈ 4.8 eV) is taken advantage of, firstly to measure the electrical energy gap of p‐TMDs receiving visible or near infrared (NIR) photons through the β‐Ga 2 O 3 . Next, the p‐TMD/n‐Ga 2 O 3 JFETs are put to high speed photo‐sensing which is achieved from the p‐TMD channel under reverse bias voltages on n‐Ga 2 O 3 . The photo‐switching cutoff frequency appears to be ≈16 and 29 kHz for visible red and NIR illuminations, respectively, on the basis of −3 dB photoelectric power loss. Such a high switching speed of the JFET is attributed to the fast transport of photo‐carriers in TMD channels. The 2D/3D‐mixed ambipolar channel JFETs and their photo‐sensing applications are regarded novel, promising, and practically easy to achieve.