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Defect‐Engineered Dzyaloshinskii–Moriya Interaction and Electric‐Field‐Switchable Topological Spin Texture in SrRuO 3
Author(s) -
Lu Jingdi,
Si Liang,
Zhang Qinghua,
Tian Chengfeng,
Liu Xin,
Song Chuangye,
Dong Shouzhe,
Wang Jie,
Cheng Sheng,
Qu Lili,
Zhang Kexuan,
Shi Youguo,
Huang Houbing,
Zhu Tao,
Mi Wenbo,
Zhong Zhicheng,
Gu Lin,
Held Karsten,
Wang Lingfei,
Zhang Jinxing
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202102525
Subject(s) - skyrmion , point reflection , materials science , condensed matter physics , topology (electrical circuits) , electric field , texture (cosmology) , spin (aerodynamics) , topological defect , hall effect , magnetic field , physics , quantum mechanics , mathematics , combinatorics , artificial intelligence , computer science , image (mathematics) , thermodynamics
In situ electrical control of the Dzyaloshinskii–Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion‐based device applications. An atomic design of defective interfaces in spin–orbit‐coupled transition‐metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO 3 /SrTiO 3 (001), a sharp interface is constructed between oxygen‐deficient and stoichiometric SrRuO 3 . This interfacial inversion‐symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit‐cell‐thick SrRuO 3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect‐engineered topological spin textures may offer an alternate perspective for future skyrmion‐based memristor and synaptic devices.