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Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers
Author(s) -
Zheng Jingying,
Miao Tingting,
Xu Rui,
Ping Xiaofan,
Wu Yueyang,
Lu Zhixing,
Zhang Ziming,
Hu Dake,
Liu Lina,
Zhang Qi,
Li Dawei,
Cheng Zhihai,
Ma Weigang,
Xie Liming,
Jiao Liying
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202101150
Subject(s) - materials science , semiconductor , fabrication , transistor , transition metal , nanotechnology , electrical conductor , electrical resistivity and conductivity , field effect transistor , electrical contacts , optoelectronics , electrode , composite material , electrical engineering , chemistry , catalysis , medicine , biochemistry , alternative medicine , pathology , voltage , engineering
Low‐dimensional semiconductors provide promising ultrathin channels for constructing more‐than‐Moore devices. However, the prominent contact barriers at the semiconductor–metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p‐type field‐effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe 2 with various low‐dimensional semiconductors. The 2D PdTe 2 synthesized through a quasi‐liquid process exhibits high electrical conductivity (≈4.3 × 10 6 S m −1 ) and thermal conductivity (≈130 W m −1 K −1 ), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe 2 electrodes with desired geometry can be synthesized directly on 2D MoTe 2 and other semiconductors to form high‐performance p‐type FETs without any further treatment. The chemically derived atomically ordered PdTe 2 –MoTe 2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe 2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.