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Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization
Author(s) -
Zhao Chunsong,
Batiz Humberto,
Yasar Bengisu,
Kim Hyungjin,
Ji Wenbo,
Scott Mary C.,
Chrzan Daryl C.,
Javey Ali
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202100860
Subject(s) - crystallization , materials science , tellurium , amorphous solid , evaporation , crystal (programming language) , crystallography , phase (matter) , chemical engineering , chemical physics , thermodynamics , metallurgy , chemistry , programming language , physics , organic chemistry , computer science , engineering
Thermally evaporated tellurium possesses an intriguing crystallization behavior, where an amorphous to crystalline phase transition happens at near‐ambient temperature. However, a comprehensive understanding and delicate control of the crystallization process for the evaporated Te films is lacking. Here, the kinetics and dynamics of the crystallization of thermally evaporated Te films is visualized and modeled. Low‐temperature processing of highly crystalline tellurium films with large grain size and preferred out‐of‐plane orientation ((100) plane parallel to the surface) is demonstrated by controlling the crystallization process. Tellurium single crystals with a lateral dimension of up to 6 µm are realized on various substrates including glass and plastic. Field‐effect transistors based on 5 °C crystallized Te single grains (6‐nm‐thick) exhibit an average effective hole mobility of ≈100 cm 2 V −1 s −1 , and on/off current ratio of ≈3 × 10 4 .