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Multiterminal Quantized Conductance in InSb Nanocrosses
Author(s) -
Khan Sabbir A.,
Stampfer Lukas,
Mutas Timo,
Kang JungHyun,
Krogstrup Peter,
Jespersen Thomas S.
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202100078
Subject(s) - molecular beam epitaxy , nanowire , materials science , conductance , josephson effect , condensed matter physics , superconductivity , ballistic conduction , resistive touchscreen , realization (probability) , quantum wire , quantum dot , optoelectronics , epitaxy , quantum , nanotechnology , physics , electron , quantum mechanics , electrical engineering , statistics , engineering , layer (electronics) , mathematics
By studying the time‐dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single‐crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low‐temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few‐channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch‐off. Combined with a new concept for shadow‐epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non‐trivial topological states in multi‐terminal Josephson junctions.