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Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)
Author(s) -
Li Yiyang,
Fuller Elliot J.,
Sugar Joshua D.,
Yoo Sangmin,
Ashby David S.,
Bennett Christopher H.,
Horton Robert D.,
Bartsch Michael S.,
Marinella Matthew J.,
Lu Wei D.,
Talin A. Alec
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070339
Subject(s) - neuromorphic engineering , materials science , protein filament , resistive random access memory , synapse , memristor , non volatile memory , resistive touchscreen , memory cell , optoelectronics , nanotechnology , computer science , electronic engineering , artificial neural network , transistor , electrical engineering , artificial intelligence , neuroscience , composite material , engineering , voltage , computer vision , biology
In article number 2003984, Yiyang Li, A. Alec Talin, and co‐workers design a deterministic nonvolatile resistive memory cell without nanosized filaments. By using the statistical ensemble behavior of all point defects within the 3D bulk for information storage, they solve the challenge of stochastic switching that has plagued filament‐based memristors. This provides a compelling artificial synapse for energy‐efficient, neuromorphic computing.