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Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020)
Author(s) -
Kwon Junyoung,
Shin JuneChul,
Ryu Huije,
Lee Jae Yoon,
Seo Dongjea,
Watanabe Kenji,
Taniguchi Takashi,
Kim Young Duck,
Hone James,
Lee ChulHo,
Lee GwanHyoung
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070320
Subject(s) - materials science , heterojunction , van der waals force , transistor , optoelectronics , exciton , field effect transistor , electron , graphene , nanotechnology , condensed matter physics , physics , quantum mechanics , voltage , molecule
In article 2003567, Chul‐Ho Lee, Gwan‐Hyoung Lee, and co‐workers report the development of a novel light‐emitting field‐effect transistor (LEFET) based on a van der Waals heterostructure. Multiple modes of operation are achieved by controlling the injection of holes and electrons in the graphene–WSe 2 contacts. Effective recombination of excitons in the 2D layer enables high external quantum efficiency in the LEFET, which will play an important role in future optoelectronic circuits.