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Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO 3 from Near‐ and Far‐Field Correlative Studies (Adv. Mater. 29/2020)
Author(s) -
ÁlvarezPérez Gonzalo,
Folland Thomas G.,
Errea Ion,
TaboadaGutiérrez Javier,
Duan Jiahua,
MartínSánchez Javier,
TresguerresMata Ana I. F.,
Matson Joseph R.,
Bylinkin Andrei,
He Mingze,
Ma Weiliang,
Bao Qiaoliang,
Martín José Ignacio,
Caldwell Joshua D.,
Nikitin Alexey Y.,
AlonsoGonzález Pablo
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070220
Subject(s) - permittivity , materials science , van der waals force , semiconductor , organic semiconductor , dielectric , infrared spectroscopy , far infrared , relative permittivity , density functional theory , condensed matter physics , infrared , nanomaterials , optics , optoelectronics , nanotechnology , computational chemistry , organic chemistry , physics , molecule , chemistry
In article number 1908176, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso‐González, and co‐workers extract the IR permittivity of the biaxial crystal α‐MoO 3 by correlative far‐ and near‐field measurements, using FTIR reflectance spectroscopy and s‐SNOM polariton interferometry, thus providing both an accurate permittivity model and a novel approach to extracting dielectric functions of nanomaterials. Moreover, through density functional theory, insights into the vibrational states dictating such permittivity are revealed.