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Shadow Epitaxy: Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids (Adv. Mater. 23/2020)
Author(s) -
Carrad Damon J.,
Bjergfelt Martin,
Kanne Thomas,
Aagesen Martin,
Krizek Filip,
Fiordaliso Elisabetta M.,
Johnson Erik,
Nygård Jesper,
Jespersen Thomas Sand
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070179
Subject(s) - epitaxy , materials science , shadow (psychology) , optoelectronics , molecular beam epitaxy , semiconductor , nanotechnology , semiconductor nanostructures , superconductivity , nanostructure , condensed matter physics , physics , psychology , layer (electronics) , psychotherapist
In article number 1908411, Jesper Nygård, Thomas Sand Jespersen, and co‐workers present “shadow epitaxy”, a novel method for controlled in situ growth of patterned metal/semiconductor hybrid nanostructures. The method enables exploration of material combinations previously unaccessible for epitaxial hybrid quantum devices. When applied to conventional materials the bottom‐up patterning significantly improves the electrical stability and reproducibility of quantum devices.