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Nanowires: Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)
Author(s) -
Gao Fei,
Wang JianHuan,
Watzinger Hannes,
Hu Hao,
Rančić Marko J.,
Zhang JieYin,
Wang Ting,
Yao Yuan,
Wang GuiLei,
Kukučka Josip,
Vukušić Lada,
Kloeffel Christoph,
Loss Daniel,
Liu Feng,
Katsaros Georgios,
Zhang JianJun
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070122
Subject(s) - nanowire , materials science , wafer , coupling (piping) , optoelectronics , silicon , quantum wire , spin–orbit interaction , charge (physics) , nanotechnology , quantum dot , condensed matter physics , quantum , physics , composite material , quantum mechanics
The first wafer‐scale growth of site‐controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian‐Jun Zhang, and co‐workers in article number 1906523. They are highly uniform and their position, distance, length, and even square‐ or L‐shaped structures can all be precisely controlled. The electrically tunable spin‐orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon.