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Ambipolar Semiconductors: Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe 2 Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories (Adv. Mater. 11/2020)
Author(s) -
Qiu Haixin,
Liu Zhaoyang,
Yao Yifan,
Herder Martin,
Hecht Stefan,
Samorì Paolo
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070085
Subject(s) - ambipolar diffusion , materials science , interfacing , photochromism , optoelectronics , transistor , electron mobility , semiconductor , layer (electronics) , electron , nanotechnology , electrical engineering , computer science , physics , engineering , quantum mechanics , voltage , computer hardware
In article number 1907903, Paolo Samorì and co‐workers report optically switchable multilevel high‐mobility field‐effect transistors based on few‐layer ambipolar WSe 2 . By interfacing with a suitably designed bicomponent diarylethene blend, hole and electron transport in WSe 2 can be simultaneously modulated with a high current‐modulation efficiency, ensuring 128 distinct current levels, which corresponds to a data‐storage capacity of 7 bit.