Ambipolar Semiconductors: Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe 2  Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories (Adv. Mater. 11/2020) | Zendy

Qiu Haixin | Zendy; Liu Zhaoyang | Zendy; Yao Yifan | Zendy; Herder Martin | Zendy; Hecht Stefan | Zendy; Samorì Paolo | Zendy

Premium

Ambipolar Semiconductors: Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe 2 Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories (Adv. Mater. 11/2020)

Author(s) -

Qiu Haixin,

Liu Zhaoyang,

Yao Yifan,

Herder Martin,

Hecht Stefan,

Samorì Paolo

Publication year - 2020

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.202070085

Subject(s) - ambipolar diffusion , materials science , interfacing , photochromism , optoelectronics , transistor , electron mobility , semiconductor , layer (electronics) , electron , nanotechnology , electrical engineering , computer science , physics , engineering , quantum mechanics , voltage , computer hardware

In article number 1907903, Paolo Samorì and co‐workers report optically switchable multilevel high‐mobility field‐effect transistors based on few‐layer ambipolar WSe 2 . By interfacing with a suitably designed bicomponent diarylethene blend, hole and electron transport in WSe 2 can be simultaneously modulated with a high current‐modulation efficiency, ensuring 128 distinct current levels, which corresponds to a data‐storage capacity of 7 bit.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research