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Epitaxial Ultrathin Films: Atomic‐Scale Metal–Insulator Transition in SrRuO 3 Ultrathin Films Triggered by Surface Termination Conversion (Adv. Mater. 8/2020)
Author(s) -
Lee Han Gyeol,
Wang Lingfei,
Si Liang,
He Xiaoyue,
Porter Daniel G.,
Kim Jeong Rae,
Ko Eun Kyo,
Kim Jinkwon,
Park Sung Min,
Kim Bongju,
Wee Andrew Thye Shen,
Bombardi Alessandro,
Zhong Zhicheng,
Noh Tae Won
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070058
Subject(s) - materials science , epitaxy , metal , atomic units , insulator (electricity) , nanotechnology , thin film , transition metal , oxide , optoelectronics , metallurgy , catalysis , layer (electronics) , biochemistry , chemistry , physics , quantum mechanics
In article 1905815, Lingfei Wang, Tae Won Noh, and co‐workers simply utilize water‐leaching to realize an atomic‐scale structural modulation at the surface of SrRuO 3 epitaxial film: the surface termination converts from SrO to RuO 2 . The resultant changes in crystal‐field symmetry and orbital occupancy stabilize a one‐unit‐cell‐thin insulating surface state in this prototypical metallic oxide.