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Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)
Author(s) -
Kim Hyun Ho,
Jiang Shengwei,
Yang Bowen,
Zhong Shazhou,
Tian Shangjie,
Li Chenghe,
Lei Hechang,
Shan Jie,
Mak Kin Fai,
Tsen Adam W.
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202070010
Subject(s) - spintronics , neuromorphic engineering , materials science , magnetism , memristor , antiferromagnetism , nanotechnology , nanoscopic scale , tunnel magnetoresistance , condensed matter physics , layer (electronics) , ferromagnetism , electrical engineering , computer science , physics , engineering , artificial neural network , machine learning
In article number 1905433, Adam W. Tsen and co‐workers simultaneously demonstrate magnetic‐field‐tunable memristive switching and electrical control of magnetism in nanoscale tunnel junctions incorporating a 2D layer antiferromagnet, chromium triiodide. Driven by the positive feedback of self‐heating, the current and magnetic transitions are robust and further occur under a 40 ns timescale. Such devices may find potential applications in spintronics, neuromorphic computing, and phase‐change memory.