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Modulation of Negative Differential Resistance in Black Phosphorus Transistors
Author(s) -
Cheng Ruiqing,
Yin Lei,
Hu Rui,
Liu Huijun,
Wen Yao,
Liu Chuansheng,
He Jun
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202008329
Subject(s) - ambipolar diffusion , materials science , transistor , modulation (music) , quantum tunnelling , optoelectronics , black phosphorus , semiconductor , electronic circuit , coupling (piping) , field effect transistor , voltage , electrical engineering , electron , physics , quantum mechanics , acoustics , metallurgy , engineering
Abstract Negative differential resistance (NDR), which describes the current decrease as the applied bias increases, holds great potential for varieties of electronic applications including radio‐frequency oscillators, multipliers, and multivalue logics. Here, the modulation of a unique NDR effect in ambipolar black phosphorus (BP) transistors is reported, which is activated by specific electrical field dependence of lateral carrier distribution and is distinct from conventional NDR devices that rely on quantum tunneling. The NDR device exhibits a high peak current density (34 µA µm −1 ) and a high operating temperature. More importantly, due to the strong coupling between the channel and the gate electrode, both the NDR peak current and peak/valley voltages can be effectively modulated by the electrostatic gate. Furthermore, it is demonstrated that light can serve as an additional terminal for NDR modulation. The findings could provide an important insight into the transport behavior of BP transistors and contribute to the design of ambipolar‐semiconductor‐based electrical circuits.